| Dispersion Induced
Insulator-to-Metal Transition in Polyaniline
Wessling, B.*, Srinivasan, D., Rangarajan, G., Mietzner,
T., Lennartz, W.
* Ormecon Chemie (a subsidiary of Zipperling Kessler & Co)
Ammersbek, Germany
Department of Physics, Indian Institute of Technology, Madras, India
II. Physikalisches Institut, Universität Köln, Germany
PACS: 71.30.+h, 75.40.Cx, 61.10.-i
The nature of charge transport in conductive polymers is broadly evaluated and discussed, .
First products based on polyaniline are introduced into the market
and further technological potentials ranging from all-polymer integrated circuits and
light emitting diodes over drug release substrates and sensors to nanotechnological
devices may now become realistic. Applications like corrosion
protection and final finish of printed circuit boards require two key properties to be
jointly active: the noble metallic character and the catalytic capability.
The metallic behaviour is still a matter of debate, as polyanilines,
polyacetylenes, or polypyrroles show partially metallic features, but most are on the
insulator side of the "insulator-to-metal (IM) transition". Quite a few are -
sample dependent after solvent-borne "secondary doping"
- in the critical regime, or cross the IM transition to the metallic side, however
reproducibly only under pressure.,
Here we show, that melt dispersion processing -
without solvents or "secondary dopants" - pushes polyaniline reproducibly to the
metallic side of the IM transition, although the undispersed polyaniline is on the
insulator side. This is the first time, that a conductive polymer is found there without
applying pressure. The transition to the metallic state is associated with a decrease of
the C6-N-C6 angle from 166° to 134°.
Processing of conductive polymers (Organic Metals) is a key problem for
basic research and industrial applications. After the usual protonation of polyaniline
(PAni) creating mobile charges, two approaches are used:
(i) A "secondary doping" process, e. g. with m-cresol, has
been shown to increase conductivity and crystallinity of polyaniline, however without
shifting it reproducibly to the metallic side of the IM transition except under pressure
(ii) Melt dispersion of PAni in an insulating polymer matrix: for example, PAni
protonated with p-toluenesulfonic acid (pTsA) has been
dispersed in polymethyl-methacrylate (PMMA). Although the conducting polymer was the minor
component in the blend, the low-temperature conductivity increased by many orders of
magnitude, the temperature dependence of the thermopower became metallic, and the IR
reflectance at low energies increased.
According to X-ray studies conducting (PAni) consists of nm-sized crystalline regions
surrounded by amorphous material. This topology also becomes visible in morphological
studies on liquid PAni dispersions, where so-called primary particles of about 10 nm size
were found,. The nanoscale structure of the
material is reflected in the electric conductivity. According to Ref., the charge transport in PAni takes place via two
contributions: metallic conduction through a crystalline core of 8 nm, and thermally
activated tunnelling (hopping) through an amorphous barrier of 1-2 nm diameter. Here, we
focus on the question whether the above dispersion process can induce fundamental changes
of (a) metallic properties and (b) structure (crystallinity). For this purpose we have
investigated paramagnetic susceptibility, dc-conductivity, and crystal structure of PAni
protonated with p-TsA as well as of various dispersions (see Table I). The raw PAni (#604,
sample # 8) was synthesised using a commercial technique described in Ref.. It was used to prepare a series of PAni-PMMA blends with
different concentrations. For the dispersion technique we refer to Ref . Only sample # 549
was synthesised following a usual synthetic procedure, but p-TsA instead of HCl. Sample #
604-pd45 is an extract residue powder of the PAni-PMMA blend # 7 (see below).
The first condition for metallic behaviour is a high charge carrier density, i. e. a high
density of electronic states at the Fermi level, N(EF). The latter one can be
determined measuring the magnetic susceptibility:
(1)
where denotes the core diamagnetic susceptibility, is the Pauli susceptibility, and C is proportional to the number
of singly occupied states, Ns.. We have used a SQUID magnetometer to measure in the temperature range from 2 to 300 K
under an applied field of H=100 mT (see Fig. 1). The core value for the counterion was
calculated to be -206 * 10-6 emu/mole/2-ring, the core value of PMMA is -62.82
* 10-6 emu/mole. and C are listed in Table 1.
Even at the lowest concentration of PAni the values are much higher than those reported
previously.
Besides a high charge carrier density also a good mobility is required to achieve a
metallic dc-conductivity, . In our
PAni-PMMA blends, thermally activated tunnelling through amorphous barriers is the
dominant transport mechanism below 200 K. In such disordered systems, the reduced
activation energy, W = dln(s )/dln(T), allows to detect a
possible insulator-to-metal (IM) transition, a concept that is related to Anderson
localization and Coulomb interaction. Fig. 2 displays W for
two blends and a compacted pellet of the corresponding undispersed, pure PAni. The
positive slope of W at low temperature indicates, that the blends are on the metallic side
of the IM transition. This is not the case for the undispersed PAni, where the slope is
negative: like other conductive polymers, it is on the insulator side. In contrast to our
blends, other materials are at best in the critical regime, where W is independent of
temperature. In general, pressures of several kbar have to be applied to reach the
metallic state. Examples are highly doped and stretch oriented PAc and PPy-PF6.
CSA-protonated PAni behaves similar, even though its properties depend sensitively on the
quality of the samples.
Below 4.2 K, where the dc-conductivity of the blends follows ,
we have also studied its variation under an external magnetic field, H. An applied field
causes to decrease: , where for the magnetoconductivity holds. The interaction parameters of our blends (g Fs = 0.329 and 0.091, respectively) are
small compared to those found in solvent processed "secondary doped"
CSA-protonated PAni (g Fs = 0.5) or
doped semiconductors near the IM transition. The exponent
describing the field dependence is
at low fields, while at high fields . This is
characteristic of disordered metals, where tunnelling plays an important role, and is also
observed in metallic Si:P near the IM transition.
In order to find out, whether the dispersion induced changes of conductivity are related
to the crystal structure of PAni, we have recorded wide angle diffraction patterns of
different PAni powders: (i) the raw material used for the above studies (#8 in Table 1 and
Fig. 3), (ii) PAni extracted from the blend with the highest concentration (#7), and (iii)
similar synthesized PAni powders with different conductivities11. The results
allow to evaluate the structure of the orthorhombic elemental cell and its parameters (see
Fig. 3). These differ from those found in studies on PAni doped with various counterions21,22,23.
Already our unprocessed raw material, which is protonated during polymerisation, exhibits
a different crystal structure than, e. g., PAni-CSA, which is made from the HCl salt via
neutralisation to the emeraldine base, , .
We find a remarkable relationship between conductivity and the cell volume, V (Fig. 4):
while V decreases by about 6% the conductivity increases by a factor of 8. With the
exception of one powder (#549) this corresponds to an increase of conductivity with
decreasing polymer chain angle delta, i.e., the angle of the C(6)-N-C(6) dimer (see Fig.
3). PAni #8, the raw material unsed for the preparation of the blends, has in its
undispersed form a delta of 166°. The same material, after dispersion and extrction from
blend #7, has a delta of 134°, indicating a much denser chain packing. Obviously, this
results in a better overlap of the conduction bands, so that the blend is on the metallic
side of the IM-transition (see Fig. 1). The transition seems to occur as soon as the
polymer chain angle of the crystalline phase falls below a specific value . Although we did not yet evaluate it exactly, 134° for p-TsA protonated polyaniline. Surprisingly, this
change is induced by melt dispersion. We interpret this as a shear induced
recrystallisation. The shear rate applied in the process is over 1,000 s-1 at a
maximum process temperature of 160 °C.
The above correlation between the structure of the crystalline PAni regions and the
macroscopic conductivity is surprising, since the latter one is determined by the highest
resistances, i.e. by the amorphous barriers. From studies on solvent-borne processing it
is assumed that the amorphous phase exists in various conformations, like"coil",
"expanded coil" or "rod-like"24 entities. The
improvement of the chain alignment is therefore the aim of solvent-borne film casting and
stretching. Our conductivity measurements show, that our dispersion process affects the
degree of order in the amorphous shells and thus their resistance.
The above results are very relevant for basic science and technology of organic
conductors. PAni processed by melt dispersion is the first conductive polymer which
crosses the IM border in a reproducible way without applying pressure. It is remarkable
that this was achieved with no solvents or secondary dopants in a production scale
process. Colloidal melt dispersion of a "pre-metallic" component with a high
density of states improves the structure of the crystalline regions and the degree of
order in the amorphous shells.
Sample # |
PAni (wt. %) |
c Pauli
(emu/mole
2 rings) |
C
emu/mole
2 rings/K |
N(EF)States/
eV /2-rings (+ 0.2) |
NS
(x 10 20) |
1 |
8.17 |
0.00024 |
0.00016 |
7.8 |
2.6 |
2 |
13.30 |
0.00019 |
0.00018 |
6.4 |
2.9 |
3 |
16.87 |
0.00026 |
0.00037 |
8.6 |
5.9 |
4 |
21.39 |
0.00007 |
0.00045 |
2.2 |
7.1 |
5 |
27.03 |
0.000080 |
0.00048 |
2.6 |
7.7 |
6 |
33.61 |
0.000076 |
0.00060 |
2.5 |
9.6 |
7 |
41.56 |
0.000082 |
0.00090 |
2.7 |
14.0 |
8 |
100.00 |
0.000690 |
0.00435 |
22.8 |
70.0 |
ES I HCl
[] |
100.00 |
- |
- |
0.26 |
- |
ES II HCl
[] |
100.00 |
- |
- |
0.083 |
- |
PAni-CSA /
m-cresol
[] |
100.00 |
0.00002 |
- |
0.7 |
4 |
PAni
(HCl)
[] |
100.00 |
- |
- |
1.4 |
- |
Table 1
You can find further references and
figures here. |